Monolithic integration of heterojunction bipolar transistors and quantum well modulators on InP: growth optimization

We demonstrate the necessary conditions for successful metalorganic vapor phase epitaxy (MOVPE) growth of InGaAs/InP-based heterojunction bipolar transistor (HBT) layers on P-I-N InGaAsP/InGaAsP quantum well (QW) modulators. Optimization of the doping profile in the uppermost P-cladding layer of the modular stack was achieved to obtain suitable junction placement after the final HBT growth. Electron beam induced current (EBIC) traces, photoluminescence, scanning electron microscope photographs, photocurrent spectra of etched diode mesas were utilized to study this process.