Preparation of Oxygen-doped and Nitrogen-doped Ge-Sb-Te System Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering

We prepared Oxygen-doped and Nitrogen-doped Ge-Sb-Te system thin film by RF magnetron sputtering, and investigated its crystalinity and resisitibity with several annealing temperature and Oxygen and Nitrogen doping content. The test phase change device was fabricated to confirm switching characteristics between crystalline (set) and amorphous (reset) phases. The resistance of Nitrogen-doped GST changed gradually and Oxygen-doped GST shows a rapid resistance change with annealing temperature, since Nitrogen-doped GST fcc phase was held to high temperature as compared with the phase transition from fcc to hcp in Oxygen-doped GST.