Lattice mismatched LPE growth of InGaP on patterned InP substrate

The performance enhancement of the semiconductor laser for 1.3μm optical communications has been required. But lasing characteristics in the high-temperature operation are poor for the present InGaAsP/InP double-heterostructure (DH) lasers. As a means for solving it, 1.3μm-wavelength InGaAs/InGaP DH lasers with improved temperature characteristics which reduced the leakage current by greatly taking the bandgap difference of cladding layer and active layer is presented. The epitaxial lateral overgrowth (ELO) technique in which growth of the crystal with the large lattice constant difference is possible is very attractive. As a first step of realizing 1.3μm InGaAs/InGaP DH lasers, liquid phase epitaxial growth of the In 0.8 Ga 0.2 P (λ=820nm) cladding layer (1.4% lattice mismatched to the InP(100) substrate) was carried out by using the ELO technique.