Production of refractory compound materials for electronic engineering applications by the powder metallurgy method

This paper presents the most important properties of bulk specimens of refractory metal disilicides having both high and low values of resistivity. The electrical properties and electrotransport data for Period IV metal silicides exhibit transitions from metallic (TiSi/sub 2/) to semiconductor (CrSi/sub 2/, MnSi /SUB 2-n/ , and FeSi/sub 2/) and once again to metallic (CoSi/sub 2/ and NiSi/sub 2/) conductivity. Chromium, manganese, and iron silicides have very good resistance to oxidation in air up to comparatively high temperatures, and in this series CrSi/sub 2/--one of the most air-oxidation resistant disilicide-is discussed at length in this paper.