Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

Molybdenum disulfide (MoS 2 ) has recently received significant attention because of its interesting thickness-dependent properties and its potential as a semiconducting substitute to graphene [1,2]. Most of the studies so far have focused on small ( 2 flakes [1-3]. For manufacturable electronics, it is essential to have large-area material that is compatible with standard fabrication processes for high yield and reproducibility. Though significant progress has been achieved using chemical vapor deposition (CVD) [4,5], the formation of high-quality wafer-scale MoS 2 of controlled thickness is still a challenge.