MIM-type cell selector for high-density and low-power cross-point memory application

A resistive memory can be highly integrated using a cross-point architecture; however, it requires appropriate cell selectors in order to suppress sneak paths and reduce power dissipation. In this paper, we study the effect of cell selectors on the readout margin and power dissipation in the read operation. A cell selector (Pt/TiO"x/Pt) and a resistive memory (Mo/SiO"x/Pt) were fabricated, and the electrical I-V characteristics were examined after connecting these two devices in series. On the basis of the I-V measurements, the readout margin and power dissipation of a cross-point array were calculated depending on the existence and characteristics of the selector.