Atomic oxygen effects on polymers containing silicon or phosphorus: Mass loss, erosion yield, and surface morphology:

The differences among polymers containing silicon or phosphorus, 20% polyhedral oligomeric silsesquioxane polyimide (20%-POSS-PI), 30% polysiloxane-block-polyimides (30%-PSX-PI), poly(siloxane imide) homopolymer (PSX-PI), and arylene ether phosphine oxide homopolymer (P-PPO), on mass loss, erosion yield, and surface morphology were elucidated. The tolerance against atomic oxygen (AO) was improved versus Kapton®H after introducing silicon or phosphorus to the polymers. The relative order of the mass loss was PSX-PI < P-PPO < 20%-POSS-PI < 30%-PSX-PI. In contrast, the erosion yields of 30%-PSX-PI, 20%-POSS-PI, and P-PPO decreased by orders of magnitude (PSX-PI declined by about two orders). The surface of Kapton®H was seriously eroded by AO exhibiting a “carpet-like” shape, and the roughness of the surface of Kapton®H became remarkable as the AO fluence increased. PSX-PI, P-PPO, 20%-POSS-PI, and 30%-PSX-PI at an AO fluence of 5.2 × 1020 atoms/cm2 had different surface morphologies, and the relative order of...