Molecular Beam Epitaxy of Cd x Hg 1−x Te

Abstract It is shown that the experimentally observed mechanisms for the formation of heterojunctions A II B VI /A III B V and GaAs/Si are consistent with crystal chemical consideration - the desire to eliminate arising on the excess of valence electrons leads to the formation of facets, twinning and disorder of the stoichiometry of the growing structure. It was created by the domestic productive automated equipment for growing heteroepitaxial structures Cd x Hg 1-x Te by the method of molecular beam epitaxy (MBE HS MCT) with quality control of layers in the growing process in real-time and high uniformity of the MCT composition over the substrate area. Describes the process that has practically unlimited possibilities of modifying the parameters on the layer thickness and ensuring the production of MBE HS Cd x Hg 1-x Te/CdTe/ZnTe/GaAs(301) high quality.