Shaped beam technology for nano-imprint mask lithography

the Leica SB350MW 50keV shaped-beam e-beam lithography tool was used to write large-area 1X templates applicable in Step and Flash Imprint Lithography (S-FIL). This paper describes how information from the pattern analysis can be used to define the ZEP7000 resist exposure optimization technique for the SB350 MW tool together with the Motorola template pattern transfer process to obtain final template images in the transparent template. As a result of the complete process, well-resolved trenches measuring 33 nm and contacts as small as 44nm were obtained. Further improvements in the resist patterning will be possible by an adaptation of our standard proximity corrector (currently used in the 90 nm node maskmaking) with a high resolution upgrade.