Semiconductor device and method of manufacturing semiconductor device, target of sputtering device

A semiconductor device includes an insulating film, a trench which is formed in the insulating film, a barrier metal film which is formed on a sidewall and a bottom surface of the trench, and is composed of an alloy of titanium (Ti) and tantalum (Ta), and a copper (Cu) wiring which is stacked on the barrier metal film, and located in the trench. A titanium concentration of the barrier metal film is equal to or more than 0.1 at % and equal to or less than 14 at %.