The Influence of the Si-Substrate Characteristics on the Quality of Poly-Si and Al Gated Mos Oxides

The dielectric strength and the Si/S1O2 interface state density were determined for thermally grown silicon dioxide layers grown on various Si-substrates (FZ, CZ with varying oxygen content and EPI material). A clear dependence of the high-field breakdown characteristics on the starting oxygen content of the Si-substrate was established. The effects of cleaning, pre-oxidation heat treatment and gate electrode material were also investigated.