Atomic and electronic structure formation at the metal-Cd1−xMnxTe interface

Abstract Atomic and electronic structure modification of a metal-Cd 1−x Mn x Te interface is achieved using selective etching of the Cd 1−x Mn x Te surface (x=0, 0.34) and Cd adsorption. It is revealed that Te, TeO 2 , Mn 3 O 4 , and CdTeO 3 are formed at the Cd 1−x Mn x Te surface etched in Br 2 solution. Te and Cd 1−x Mn x Te produce TeCd 1−x Mn x Te heterojunctions, the salient features of which are nearly symmetric nonlinear I-V characteristics. At the Cd 1−x Mn x Te surface with adsorbed Cd, CdTe might form, resulting in a CdTe-Cd 1−x Mn x Te heterojunction. The metal-CdTe-Cd 1−x Mn x Te microstructure is characterized by a nonlinear dependence of current on voltage and rectifying behaviour. The results obtained give deep insight into electronic processes in metal-Cd 1−x Mn x Te microstructures.