AN INNOVATED PROCESS OF Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt INTEGRATED FERROELECTRIC CAPACITORS FOR FeRAM

ABSTRACT An innovated and the typical one-mask-patterned integrated ferroelectric capacitors process with Sol-Gel deposited technique are investigated. The key improvement for the innovated route is that the ferroelectric film was etched in non-crystalline phase. Due to the etching damage, the ferroelectric and fatigue properties of the typical integrated capacitor were degradation, and the desquamation of top electrode was also existed. The uniformly Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt (Pt/PT/PZT/PT/Pt) integrated ferroelectric capacitor arrays with explicit and smooth side-wall were obtained by the innovated integrated process. The XRD results exhibit that the innovated integrated ferroelectric capacitor was well crystallized, and the ferroelectric film belongs to the perovskite phase. The etching degradation on the properties of the innovated integrated ferroelectric capacitor was reduced to minimize, confirmed by SEM, EDX results, the ferroelectic and fatigue properties. The innovated process can be co...