Stress dependence and poly-pitch scaling characteristics of (110) PMOS drive current

This work demonstrates that the ~2times mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190 nm liners poly-pitch for devices under compressive stress. (110) PMOS with 3.5 GPa compressively stressed liners demonstrate strong channel drives with I on =800 muA/mum at I off =100 nA/mum (V dd =10 V) for 190 nm poly-pitch, the highest reported to date for 45-nm-node (110) PMOS using conventional gate dielectrics without eSiGe stressors. Additionally, (110) PMOS show better scalability, with 15% smaller total I on degradation than (100) PMOS when poly-pitch scales from 250 nm to 190 nm.