A method for depositing dielectric layers in a vacuum and using the method

The invention relates to a method for depositing a dielectric layer on a substrate 12 within a vacuum chamber 11, wherein at least one target 14, consisting of one of the materials Al, Ti, Hf, Ta, Nb, Zr, Zn-doped Si, by at least one magnetron is atomized into the vacuum chamber 11 for supplying a working gas and a reactive gas. 13 Here, a Si-containing precursor is introduced into the vacuum chamber 11 during sputtering, wherein the flow rates of the reactive gas and the precursor can be set in the vacuum chamber 11 such that both products from the reaction abgestaubter target particles with the reactive gas as well as products from the reaction of Precursorbestandteilen involved with the reactive gas to at least 20% of the layer structure. The invention also relates to a use of the method.