Nanoelectrode THz photomixer using a MOCVD-grown InGaAs thin layer

By adopting nanoelectrodes, the performances of THz photo-conductive antennas (PCAs) and photomixers (PMs) have been significantly improved. On the extension of our previous works, here we present a nanoelectrode PM for homodyne THz detection, free from low-temperature-grown semiconductors. It was realized by utilizing the electric field enhancement effect by the nanoelectrode, which may be applied to various kinds of optoelectronic devices in general.