Recent progress on development of sputtered PZT film at FUJIFILM

FUJIFILM has developed a method of forming lead zirconate titanate (PZT) films with unusual piezoelectric properties using RF sputtering. The film has a piezoelectric coefficient of d 31 = −250pm/V which is ∼70% higher than conventional PZT film. This was made possible by high content of Nb dopant (13 at. %) and a precise control of crystal orientation. One of the most unique features of the film is observed in its polarization behavior. The film is spontaneously poled as being deposited, and the polarization is highly resistant to high temperatures. This unique feature of the film gives us great advantages during development of PZT film devices and building production lines.