ガスフロトースパッタ法による多結晶 Fe 膜成長に及ぼす低エネルギーイオン衝撃の効果

The effects of ion bombardment during deposition on the structures and magnetic properties of Fe films were investigated by a bias-sputtering technique. In order to control the energy of incident ions at low bias voltages, a gas-flow-sputtering method was used in which effective deposition of films was possible even at 1-Torr pressure. Some marked influences on the grain structure and coercive force Hc of polycrystalline films were observed at bias voltages higher than -20V. The growth of crystal grains was promoted at low bias voltages in the range of -30V. In contrast, the crystallinity of films was suppressed at voltages around -100 V. The value of Hc was decreased by applying a substrate bias, and had a minimum value of 4 Oe when the bias was about -30 V. It was also observed that the oxygen content in films was decreased by bias-sputtering, as has been generally observed.