The effect of low glancing angle sputtering on depth resolution in secondary ion mass spectrometry

Abstract This paper describes the development of the depth resolution in secondary ion mass spectrometry using a low glancing angle sputtering method under cesium (Cs + ) or oxygen (O + 2 ) primary ion bombardment. The primary ion glancing incident angle is less than 10° in this method. Using this method, the depth resolution increases with increase in the primary ion incident energy. W/C multilayer sample analysis shows 9 A depth resolution under 8° 10 keV Cs + ion bombardment. The high resolution surface or interface profiling is achieved using the low glancing angle sputtering method in InP/InGaAs and Ga-implanted Si samples.