Old Web
English
Sign In
Acemap
>
Paper
>
Quantum-Chemical Study on the Mechanism of Atomic Layer Epitaxy of GaAs Using Arsine and Trimethylgallium
Quantum-Chemical Study on the Mechanism of Atomic Layer Epitaxy of GaAs Using Arsine and Trimethylgallium
1990
Ryotaro Irie
Noriyuki Murakami
Keywords:
Atomic layer epitaxy
Arsine
Inorganic chemistry
Trimethylgallium
Chemistry
Physical chemistry
quantum chemical
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]