Quasi-Nondestructive Observation of Oxidation-Induced Stacking Faults in Silicon by Photoacoustic Topography

Oxidation-induced stacking faults (OSF) have been observed quasi-nondestructively by photoacoustic topography. Photoacoustic (PA) signals were detected with a ZnO transducer made by sputtering on the back surface of a sample. We found a good correlation between the PA topograph and the distribution of OSF. The spatial resolution was about 60 µm in the present PA topography.