Structure and Optical Property of Cu2O:N Thin Film Deposited by Reactive Pulse Magnetron Sputtering

N-doped Cu2O (Cu2O:N) thin films were deposited on glass substrate by reactive pulse magnetron sputtering method using Cu target. Crystalline phases of thin films were controlled by adjusting N2 / O2 flow rate ratio and sputtering power precisely during the sputtering process, and the single phase of Cu2O(111) thin films were obtained at room temperature. The thin films deposited at different sputtering powers were characteristics of 2D growth and the root mean square (RMS) of surface roughness of thin films gradually increased with the increasing of sputtering power. The optical band gap (Eg) of thin films were in the range 2.18-2.35 eV, and slightly decreased with increasing of sputtering power from 45 W to 90 W.