Characterization studies of low pressure chemical vapour deposition SICARB layers for wide band gap emitters

Abstract The microstructure of low pressure chemical vapour deposition SICARB layers with carbon concentrations [C] up to 50% has been determined by spectroscopic ellipsometry (SE), IR transmission, X-ray diffraction and cross-sectional transmission electron microscopy. For [C] ≲ 15% a phase-separated material is obtained, including polycrystalline silicon, while at higher concentrations the material consists of SiC microcrystallites in an amorphous matrix. Good correlation of the techniques has been obtained and compositions and layer thicknesses have been determined by detailed fitting of the SE spectra.