Reliability issues of offset drain transistors after different modes of electrical stress

The reliability issues of offset drain transistors (ODTs) after different modes of static electrical stress (high voltage uniform gate stress, high voltage drain stress and hot carrier stress) are presented. Besides, the evolution of the macroscopic electrical parameters of these devices after high voltage uniform gate stress are attributed quantitatively to the evolution of the bulk gate oxide trapping characteristics and the variation of the Si/SiO2 interface state charge.