Analysis of the Structure and Optical Properties of Epitaxial ZnO Films at Different Substrate Temperatures

In this work,we deposited ZnO epitaxial films on Al_2O_(3)(0001) substrates using the helicon wave plasma assistant sputtering technique at different substrate temperatures.Through the analysis of the structure and optical properties of the ZnO epitaxial films,we discussed the influence of the substrate temperature on the properties of the ZnO films growth.The results indicate that we can achieve the high quality epitaxial growth of the ZnO films in an appropriate temperature due to the activation of the plasma to the reaction gases and the assistant effect of the carrier energy particles to the surface reaction.However,the surface reaction arosed by the higher substrate temperatures make against to the reduction of oxygen vacancies.This restricts the improvement of the epitaxial qualities and the optical properties of the films.