Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different sputtering powers. With the sputtering power increasing from 100 W to 400 W, the film’s crystallinity was enhanced. When the sputtering power was 400 W, an In2O3 (104) plane could be detected. Films with optimal electrical properties were produced at a sputtering power of 300 W, a carrier mobility of 31.25 cm2·V−1·s−1, a carrier concentration of 9.11 × 1018 cm−3, and a resistivity of 2.19 × 10−4 Ω·m.