Si quantum dots for solar cell fabrication
2009
Abstract Thin film stacks, made of Si-rich SiO alternated with SiO 2 layers, have been deposited by reactive RF sputtering starting from Si and SiO 2 targets, respectively. Crystalline quantum dots (QDs) have been nucleated by Si precipitation from the Si-rich SiO phase using high temperature annealing. PL measurements evidenced a blueshift of the emission peak which has been attributed to a reduction of the Si QD size. Electrical resistivity measurements showed a semiconducting-like behaviour. QD size affect the resistivity values and the activation energies. We have tentatively interpreted the electrical behaviour of this quantum structure by using a Meyer-Neldel Rule conventionally used to explain the electrical properties of nanoporous silicon.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
16
Citations
NaN
KQI