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Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology
Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology
2009
Dinari
Serru
Camiade
Teyssandier
Baglieri
Durand
Mallet-Guy
Plaze
Keywords:
Optoelectronics
High-electron-mobility transistor
Linearity
high isolation
Gallium arsenide
power integrated circuits
wide band
Power (physics)
Monolithic microwave integrated circuit
Materials science
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