AlGaN-GaN HEMTs: material, device, circuit technology and applications

The enabling features and performance of GaN based HEMTs as a high power, high bandwidth semiconductor technology are presented. Progress on materials development includes the development of AlGaN and AlN barrier HEMTs with room temperature electron mobility exceeding 2000 cm/sup 2//V-s. Trap free GaN HEMT devices with > 10 W/mm power density and devices with > 70 % efficiency are presented. Operation at > 200 /spl deg/C is reported. Simultaneous linearity and efficiency under class B is presented followed by discussion of mm-wave power performance. Finally, device scaling resulting in a total power > 100 Watts and GaN HEMT circuit demonstrations are presented including mm-wave amplifier with > 3 Watts at 30 GHz and 35 GHz.