Magnetic-field-induced two- to three-dimensional transition in weak localization and weak anti-localization regimes for In2O3−x thin films

Abstract We have extensively studied the magnetic-field-induced two- to three-dimensional transition in degenerated electronic systems in the weak localization and weak anti-localization regimes for polycrystalline In 2 O 3− x thin films grown by the sputtering method. The magneto-conductance has been measured as functions of the temperature, the magnetic field, the azimuth of the magnetic field for the film surface and the film thickness (100, 150, 450 and 600 A ).