A 150 mm Wafer Technology for Highly (111) Oriented Pb(Zr,Ti)O3 Films on BaPbO3/Pt Electrode

Highly (111) oriented PbZr 0.40 Ti 0.60 O 3 (PZT) thin films have been fabricated on BaPbO 3 /Pt electrodes by a multi-target reactive sputtering. The growth characteristics of the PZT films have been found to be highly influenced by the BaPbO 3 thickness. The PZT films deposited on 12 nm BaPbO 3 show a high remnant polarization (≈ 40 μC/cm 2 ) and relatively low leakage current as compared to the PZT deposited on 30 and 60 nm thick BaPbO 3 electrodes. A cross-sectional analysis of the PZT/BaPbO 3 (12 nm) structure by a high resolution transmission electron microscope shows a quasi epitaxial growth of PZT on BaPbO 3 electrode layer.