EB resolution capability with CP exposure
2011
We are evaluating the resolution capability of character projection (CP) exposure method using a Multi Colum Cell
Proof of Concept (MCC-POC) tool. Resolving of 14nm half pitch (HP) 1:1 line and space (LS) patterns are confirmed
with fine openings of a DNP fabricated CP mask for 10:1
de-magnification ratio. CP exposure has been proven to exhibit
high resolution capabilities even under the most challenging optimization conditions that are required for throughput
enhancement. As a result of evaluating the resolution capability of CP technology, it became apparent that the CP
technology has strong potentials to meet future challenges in two areas. One is where an increased number of CP with
variable illumination technology gives a higher throughput which has been the main objective behind the development of
this technology, and the other is to achieve higher resolution capability that is one of the strengths of CP exposure
method. We also evaluated the resolution on Quartz mask blanks instead of Si wafers and obtained 18nm HP 1:1
resolution with CP exposure.
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