High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

We demonstrate high power blue and green InGaN/GaN multiple-quantum-well (MQW) light emitting diodes (LEDs) grown on low extended defect density semipolar (10 1 1) and (11 2 2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at 20 mA under pulsed operation (10 % duty cycle) were 19.7 mW and 34.4 % for the blue LED and 9.0 mW and 18.9 % for the green LED, respectively. The blue LED showed <1 nm red-shift with change in drive current from 1 - 200 mA, indicating a significant reduction of polarization related internal electric fields.