Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi0.52Sb1.48Te3

Abstract The feasibility of using Bi 2 Te 3 -based alloys in low-grade heat thermoelectric power generation has been intensively investigated via a substitutional doping approach over the last decade. However, the comprehensive and quantitative understanding of the electronic and thermal transport parameters of doped Bi 2 Te 3 -based alloys including their carrier concentration ( n c ), carrier mobility ( μ Hall ), density of state (DOS) effective mass ( m d ∗ ), and electronic ( κ ele ), lattice ( κ lat ), and bipolar thermal ( κ bp ) conductivities is still elusive. The understanding of these parameters is a prerequisite for designing the modules for real-time applications. In this study, we investigated the effect of Pb, Ag, and Cu doping on the thermoelectric transport parameters of p -type Bi 0.52 Sb 1.48 Te 3 (BST) both theoretically and experimentally. The thermoelectric transport properties of BST and their temperature dependences could be systematically tuned in a low-temperature range by controlled doping of Pb, Ag, and Cu mainly because of the increased concentration of the majority hole carriers. In addition, a zT value of 1 could be obtained over the wide temperature range of 300–400 K by optimizing the doping elements and contents because of the synergetic effect of the suppression of bipolar conduction at higher temperatures and the gradual increase in m d ∗ with the doping content at n c 20  cm −3 .