Process for growing P-type ZnO crystal film by real-time doping nitrogen

A process for growing P-type ZnO crystal film by real-time doping of nitrogen includes washing substrate, putting it in reaction chamber of sputter equipment, vacuumizing heating, substrate to 200-600 deg.c, introducing the mixture of high-purity NH3 and O2, and sputter growing with high-purity Zn as target under 1-10 MPa.