Control of cadmium vapor pressure at growth and annealing of CdZnTe:Cl crystals with variable content of zinc for nuclear detectors

Conductance compensation of Cd1-xZnxTe:Cl crystals with variable content of Zn (x = 0,0002, 0,005, 0,01 and 0,05) for nuclear detectors both during postgrowth annealing of ingots and at annealing of separate samples at different vapor pressures of Cd was investigated. It is established that to obtain the Cd1-xZnxTe:Cl crystals (x≥0.05) with the best transport performances, it is necessary to control cadmium vapour pressure as well as zinc vapour pressure of during material growing. On crystals with Zn content x=0.0002; 0.005; 0.01 with annealing of conditions change it was possible to achieve high values of μeτeand μhτh, comparable with these values for CdTe:Cl. For crystals with x=0.05; 0.1 μeτeand μhτh practically did not depend on conditions of postgrowth annealing (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)