Gallium phosphide on insulator photonics enabled by micro-transfer printing
2020
Gallium phosphide-on-insulator (GaP-OI) has recently emerged as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. Here we demonstrate the transfer of GaP layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hetero)-integrations.
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