Old Web
English
Sign In
Acemap
>
Paper
>
β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels
β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels
2020
Yuewei Zhang
Akhil Mauze
Fikadu Alema
Andrei Osinsky
Takeki Itoh
James S. Speck
Keywords:
Optoelectronics
Transistor
Communication channel
Fin
Materials science
Aspect ratio (aeronautics)
Correction
Source
Cite
Save
Machine Reading By IdeaReader
41
References
1
Citations
NaN
KQI
[]