A Rad-Hard Miniaturized Switching Module for High-Voltage Applications

A miniaturized, scalable, and rad-hard high-voltage module is demonstrated as a “proof-of-concept.” The module is suitable for space applications. The design uses a commercial process that combines 0.25-μm complementary metal-oxide semiconductor (CMOS) transistors with a high-voltage lateral double-diffused metal-oxide-semiconductor (DMOS) device (>600 V). The design was simulated, fabricated, and tested and shows functionality up to 2.5 kV. Several radiation-hardening-by-design (RHBD) techniques were used to improve radiation hardness over 100 krad.