Atomic layer epitaxy of (CdTe)m(ZnTe)n-ZnTe multiquantum wells on (001)GaAs substrate

Abstract (CdTe) m (ZnTe) n -ZnTe multiquantum well structure has been proposed and grown on (001)GaAs substrate by atomic layer epitaxy. Growth has been investigated using reflection high energy electron diffraction. Material characterizations have been performed by X-ray diffraction and photoluminescence. With this structure, great improvements have been made in crystalline quality compared with CdTe-ZnTe multiquantum wells, due to the reduction of misfit dislocations.