Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Electrical characterization and modeling of 2 times 50 mum gatewidth InAs/AlSb HEMTs with 225 nm gate-length have been performed. The fabricated devices exhibited a transconductance g m of 650 mS/mm, an extrinsic cutoff frequency f T and an extrinsic maximum frequency of oscillation f max of 120 and 90 GHz, respectively, already at a low V DS of 0.2 V. A minimum noise figure less than 1 dB between 2-18 GHz was achieved at a dc power consumption of only 10 mW/mm. This demonstrates the potential of InAs/AlSb HEMTs for low-power, low-noise applications. To account for the elevated gate-leakage current l G in the narrow-bandgap InAs/AlSb HEMT, the conventional field-effect transistor small-signal model has been extended. The relatively high I G was modeled by shunting both C gs and C gd with R gs and .R gd , respectively. As a result, the small-signal S-parameters were more accurately modeled, especially for frequencies below 10 GHz. Utilizing this modeling approach, excellent agreement was obtained between measured and modeled S-parameters, unilateral power gain U (Mason's gain) and stability factor K.