Characterization of the passivation of CdS thin films grown by chemical bath deposition on InP

Thin films of CdS with different nominal ratios c (thiourea)/c (CdCl2) have been grown by conventional chemical bath deposition on an InP substrate, in order to study the influence of each film on the surface passivation of the InP sample. The values of the surface recombination velocity were determined by the photoacoustic technique (PA) and photoluminescence. Atomic force microscopy measurements were also used to correlate the results obtained from the PA measurements.