Dislocation-induced electronic levels in semi-insulated CdTe

Abstract We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL) and compared our data with earlier results. We confirmed the direct correlation between Y-emission and dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density 5  cm −2 ). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important midgap level E C −0.74 eV in CdTe and Cd 1− x Zn x Te ( x