Efecto del espesor en el comportamiento magnético de películas delgadas de mn3ga elaboradas por erosión catódica sobre si2o/si(001)

In this paper are report the results of the synthesis and characterization of Mn3Ga thin films grown on Si2O/Si(001) substrates by sputtering technique, studying the thickness-dependent magnetic behavior of the film. The motivation for carrying out the reported work is the contribution in the application of this material in the field of nanotechnology, specifically in the field of Spintronics. The importance of this material is due to their unique combination of magnetic properties is its promising utility in the development of devices such as Magnetic Random Access Memory (MRAM), which allows a non-volatile data storage. Using X ray diffractometry (XRD) it was determined that films of 2 to 10 nm exhibit the tetragonal crystal structure, while 50 nm thin films exhibit additionally the hexagonal crystal structure. Atomic force microscopy (AFM) was used to measure the grain size from where the grain growth kinetics was obtained. It was found that the grain size of the 50 nm thin film do not match this kinetics demonstrating that films thicker than 10 nm exhibit a different phase that the tetragonal. Furthermore, the magnetic measurements determined that the 2 nm thin films have the largest magnetization; 50 nm thin films exhibit both ferrimagnetic as antiferromagnetic behavior.