Fabrication of CdS/CdTe Heterostructures by Chemical Synthesis Using a p-Type CdTe Film Grown by Electrodeposition Employing EDTA as Strong Complexing Agent

CdS/CdTe heterostructures were fabricated by chemical techniques. CdS films were deposited by chemical bath deposition on soda-lime/SnO2:F substrates. CdS films were obtained varying the concentration of thiourea and the growth temperature. CdTe films were grown by electrodeposition on SnO2:F/CdS substrates at 80°C, using ethylenediaminetetraacetic acid (EDTA) as strong complexing agent. The cathodic potential was varied from − 0.70 V to − 1.20 V. Raman spectroscopy showed that for a potential of − 1.20 V a CdTe film with high crystalline quality was obtained. The electric characterization through J–V measurements, indicates the formation of a n-CdS/p-CdTe junction. These results showed that p-type CdTe films grown by electrodeposition technique using EDTA as strong complexing agent were obtained.