New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

Through the evaluation and analysis of the data retention characteristics, it was found that the CTF memory cell behaviors are quite different from conventional that of the FG type flash memory cell in terms of Arrhenius plot of data retention because Ea of the CTF memory cell has a high dependency on the bake temperature and P/E cycles. A proper acceleration test condition is needed to predict the data retention lifetime of the CTF memory, considering the change of Ea in the low temperature region (<125°C).