Old Web
English
Sign In
Acemap
>
Paper
>
Reliability characterization of advanced oxynitride gate dielectrics for ULSI MOSFET application
Reliability characterization of advanced oxynitride gate dielectrics for ULSI MOSFET application
1998
Byoung Woon Min
Keywords:
Dielectric
Electronic engineering
Gate oxide
MOSFET
Integrated circuit
Electrical engineering
Materials science
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]