THICKNESS DEPENDENT PROPERTIES OF CdSKdTe HETERO-PHOTO-ELEMENTS

The analysis of the I-V characteristics of CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating: J,, = 24,8 mA/cm2, V,, = 0,82V, FF = 0,48, q = 9,76% are obtained in the case when time of deposition of CdTe is 3,5min. The photoresponse decreases with increasing of the CdTe thickness. The photosensitivity covers the wavelength range from 050 pm to 0,86 pm for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3,5 min.