Experimental Evidence of Mobility Enhancement in Short-Channel Ultra-thin Body Double-Gate MOSFETs

We report for the first time an experimental evidence of mobility enhancement in ultra-thin body Double-Gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single and double-gate mode is measured and the temperature dependence of mobility is also studied. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low inversion densities.