Calculation of intrinsic carrier concentration in Hg1−xCdxTe

Intrinsic carrier concentration in Hg1−xCdxTe is calculated as a function of temperature and composition using the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg. An expression fitted to these calculations is: ni[5.585−3.820x+1.753(10−3)T −1.364(10−3)xT] ×(1014)E3/4gT3/2 exp(−Eg/2kbT). The fit of this approximation is within 1% of the calculated ni for the range Eg>0, 50

Keywords:

• Electronic band structure
• Cadmium telluride photovoltaics
• Hall effect
• Nuclear magnetic resonance
• Charge-carrier density
• Condensed matter physics
• Band gap
• Chemistry
• Mathematical model
• Physics

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